A Resonant One-Step 325 V to 3.3–10 V DC–DC Converter With Integrated Power Stage Benefiting From High-Voltage Loss-Reduction Techniques
نویسندگان
چکیده
This work presents a self-timed resonant high-voltage (HV) dc–dc converter in HV CMOS silicon-on-insulator (SOI) with one-step conversion from 100–325 V input down to 3.3–10 output, optimized for applications below 500 mW, such as IoT, smart home, and e-mobility. Unlike bulky power modules, the is fully integrated, including an on-chip stage, only one external inductor (10 $\mu \text{H}$ ) capacitor (470 nF). It reaches high density of 752 mW/cm 3 , overall peak efficiency 81%, light-load 73.2% at 5 50 mW output. loss-reduction techniques are presented experimentally confirmed offer improvement more than 32%. Integrated insulated gate bipolar transistors (IGBTs) discussed implemented attractive alternative conventional integrated switches, resulting ~20% smaller area lower losses.
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ژورنال
عنوان ژورنال: IEEE Journal of Solid-state Circuits
سال: 2021
ISSN: ['0018-9200', '1558-173X']
DOI: https://doi.org/10.1109/jssc.2021.3098751